On December 7, 2022, GitHub detected unauthorized access to a set of repositories used in the planning and development of Atom. Such ultrathin charge blocking layers are proved to be versatile in reducing the dark current for devices with NIR-absorbing NFA.JanuUpdate: Update to the previous version of Atom before February 2 As a result, we have demonstrated a P3HT:PC 61BM-based device with a low dark current of 2.5 nA cm −2 and a high detectivity of 10 13 Jones at −1 V bias, which are higher than those of the commercial silicon-based photodiodes.
At an optimal Co 3O 4 thickness of 1 nm, the dark current of the Co 3O 4 device is almost 1 order of magnitude lower than that of the PEDOT:PSS device. It is found that the highly smooth Co 3O 4 interlayer with a deep valence band of 5.3 eV and a shallow conduction band of 1.6 eV effectively promotes photogenerated charge extraction and suppresses the electron injection under reverse bias, resulting in a significantly improved photodetection performance. Incident light loss and carrier transport loss could be minimized due to the ultrashort transport path. In this work, the atomic-layer-deposition of ultrathin Co 3O 4 anode interlayers which are used as hole transporting/electron blocking layers in organic photodetectors is investigated.
Transition-metal oxides are widely used to improve the power conversion efficiencies of organic or perovskite solar cells because their chemical and electronic properties can be tuned to enable charge exchange with a wide variety of semiconductor materials.
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